Artículos de revistas
Lateral Lo.ga,.,? Heterostructures Obtained By Single Step Growth On Pre-patterned Substrate By Chemical Beam Epitaxy
Registro en:
Materials Research Society Symposium - Proceedings. , v. 570, n. , p. 79 - 84, 1999.
2729172
2-s2.0-0033310692
Autor
De Castro M.P.P.
Bettini J.
Ribeiro C.A.
Carvalho M.M.
Fratesc N.C.
Institución
Resumen
We present an investigation on the spatial compositional variation in InQaP layers grown by chemical beam epitaxy (CBE)on pre-patterned substrates. Neighboring regions with 190 meV bandgap discontinuity are observed with the growth at 500°C. The development of laser structures on V-grooves that incorporate these lateral hcterostructures is achieved by controlling the growth temperature during growth. °1999 Materials Research Society. 570
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