Artículos de revistas
Line And Point Tunneling In Scaled Si/sige Heterostructure Tfets
Registro en:
Ieee Electron Device Letters. Institute Of Electrical And Electronics Engineers Inc., v. 35, n. 7, p. 699 - 701, 2014.
7413106
10.1109/LED.2014.2320273
2-s2.0-84903616339
Autor
Schmidt M.
Schafer A.
Minamisawa R.A.
Buca D.
Trellenkamp S.
Hartmann J.-M.
Zhao Q.-T.
Mantl S.
Institución
Resumen
In this letter, we systematically investigate the impact of gate length and channel orientation on the electrical performance of tunneling field-effect transistors (TFETs). We fabricate and characterize Si/SiGe heterostructure TFETs with p-doped compressively strained Si0.5Ge0.5 source, intrinsic Si channel, and n-doped Si drain. We observe a linear relation of gate length, Lg, and ON-current, ION, which is the first experimental proof of line tunneling occurring in a TFET. TCAD simulations support our observations. After forming gas annealing, short-channel TFETs exhibit different I-V characteristics compared with long-channel devices due to better passivation. © 2014 IEEE. 35 7 699 701 Verhulst, A., Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates (2008) IEEE Electron Device Lett., 29 (12), pp. 1398-1401. , Dec Nayfeh, O.M., Design of tunneling field-effect transistors using strained-silicon/ strained-germanium type-II staggered heterojunctions (2008) IEEE Electron Device Lett., 29 (9), pp. 1074-1077. , Sep Kazazis, D., Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator (2009) Appl. Phys. Lett., 94 (26). , Jun. 263508-1-263508-3 Nah, J., Ge-SixGe1-x core-shell nanowire tunneling field-effect transistors (2010) IEEE Trans. Electron Devices, 57 (8), pp. 1883-1888. , Aug Schmidt, M., Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors (2012) Solid-State Electron., 71, pp. 42-47. , May Schmidt, M., Unipolar behavior of asymmetrically doped strained Si 0.5Ge0.5 tunneling field-effect transistors (2012) Appl. Phys. Lett., 101 (12). , Sep. 123501-1-123501-4 Villalon, A., Strained tunnel FETs with record ION: First demonstration of ETSOI TFETs with SiGe channel and RSD (2012) Proc. VLSIT, 743 (2007), pp. 49-50 Sandow, C., Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors (2009) Solid-State Electron., 53 (10), pp. 1126-1129. , Oct Vandenberghe, W., Analytical model for point and line tunneling in a tunnel field-effect transistor (2008) Proc. Int. Conf. Simulation Semiconductor Processes and Devices, 1 (3), pp. 137-140 Vandenberghe, W.G., A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors (2012) Appl. Phys. Lett., 100 (19). , May 193509-1-193509-4 Minamisawa, R.A., Hole transport in strained Si0.5Ge0.5 QW-MOSFETs with 〈110〉 and 〈100〉 channel orientations (2012) IEEE Electron Device Lett., 33 (8), pp. 1105-1107. , Aug Cartier, E.A., (Invited) the role of oxygen in the development of Hf-base high-k/metal gate stacks for CMOS technologies (2010) ECS Trans., 33 (3), pp. 83-94 Kao, K., Optimization of gate-on-source-only tunnel FETs with counter-doped pockets (2012) IEEE Trans. Electron Devices, 59 (8), pp. 2070-2077. , Aug