Artículos de revistas
Sketched Oxide Single-electron Transistor
Registro en:
Nature Nanotechnology. , v. 6, n. 6, p. 343 - 347, 2011.
17483387
10.1038/nnano.2011.56
2-s2.0-79960125201
Autor
Cheng G.
Siles P.F.
Bi F.
Cen C.
Bogorin D.F.
Bark C.W.
Folkman C.M.
Park J.-W.
Eom C.-B.
Medeiros-Ribeiro G.
Levy J.
Institución
Resumen
Devices that confine and process single electrons represent an important scaling limit of electronics1,2. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties3-5. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides6-8. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ∼1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. 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