Artículos de revistas
Visible Light Emission From Reverse Biased Amorphous Silicon Carbide P-i-n Structures
Registro en:
Journal Of Non-crystalline Solids. , v. 97-98, n. PART 2, p. 1319 - 1322, 1987.
223093
10.1016/0022-3093(87)90316-4
2-s2.0-45949117851
Autor
Alvarez F.
Fragnito H.L.
Prieto P.
Chambouleyron I.
Institución
Resumen
The emission at room temperature of visible light (near infrared) from reverse biased (forward biased) silicon carbide p-i-n heterostructures is reported. The mechanisms of carrier injection at room and at low temperatures are studied. An exciton-like recombination mechanism explains both, the short recombination time and the improved efficiency observed in samples with higher carbon concentration. © 1987. 97-98 PART 2 1319 1322 Kruagan, Endo, Guang-Pu, Nomura, Okamoto, Hamakawa, (1985) J. Non-Crust. Solid., 77-78, p. 1429 Tsang, Street, (1979) Phys. Rev. B, 19 (6), p. 3027 Alvarez, Chambouleyron, (1984) Solar Energy Mat., 10, p. 151. , Due to the lack of data, the mobility value was taken to be the same as in an a-SiNx:H alloy of similar band gap