Artículos de revistas
Fabrication And Electrical Properties Of Epitaxial Layers Of Gaas Doped With Manganese† † Work Supported In Part By Telebrás, Cnpq, Fapesp, Bid, Bnde.
Registro en:
Solid State Electronics. , v. 20, n. 8, p. 653 - 656, 1977.
381101
10.1016/0038-1101(77)90039-9
2-s2.0-0017522379
Autor
Gouskov L.
Bilac S.
Pimentel J.
Gouskov A.
Institución
Resumen
The method of fabrication of epitaxial layers of GaAs doped with Mn is described. Resistivity and Hall effect measurements are made on various samples in the temperature range 77-300°K. The experimental results are used to determine the densities Na, Nd of acceptors and compensating donors, the activation energy Ea of the acceptor level associated with Mn and also the mobility of the carriers. These values are calculated using a model involving the two valence bands carriers. The results obtained confirm that the acceptor doping presents a saturation. They are compared to results previously published. A new value, rather close to unity, is obtained for the distribution coefficient of Mn in the case of low doping. © 1977. 20 8 653 656 Vieland, (1962) J. Appl. Phys., 33, p. 2007 Blakemore, Brown, Jr., Stass, Woodbury, (1973) J. Appl. Phys., 44, p. 3352 Brown, Jr., Blakemore, (1972) J. Appl. Phys., 43, p. 2242 Woodbury, Blakemore, (1973) Phys. Rev. B, 8, p. 3803 Kordos, Jansak, Benc, Preparation and properties of Mn-doped epitaxial gallium arsenide (1975) Solid-State Electronics, 18, p. 223 Debye, Conwell, (1954) Phys. Rev., 93, p. 693 Seagen, Pike, Impurity conduction in manganese-doped gallium arsenide (1974) Physical Review B, 10, p. 1760 d'Olne Campos, Gouskov, Gouskov, Pons, Residual acceptors in natural GaSb and Gaxln1−xSb their contribution to transport between 4.7 and 300 °K (1973) Journal of Applied Physics, 44, p. 2642 Madelung, (1964) Physics of III–V Compounds, , Wiley, New York Ehrenreich, (1960) Phys. Rev., 120, p. 1951