Artículos de revistas
Structural Studies On Inp/gaas Heterostructures Using Multiple X-ray Diffraction
Registro en:
Vacuum. , v. 46, n. 8-10, p. 1013 - 1015, 1995.
0042207X
10.1016/0042-207X(95)00095-X
2-s2.0-0029358897
Autor
Morelhao S.L.
Avanci L.H.
Cardoso L.P.
Riesz F.
Rakennus K.
Hakkarainen T.
Institución
Resumen
InP epitaxial layers grown by gas-source molecular beam epitaxy on (100) GaAs substrates were characterized using three-beam multiple X-ray diffraction. The mosaic spread along the [01̄1] and [011̄] directions and the in-plane epilayer lattice parameter are determined from computer simulations. The effects of nucleation temperature, buffer layer type and post-growth annealing and substrate misorientation are studied. © 1995. 46 8-10 1013 1015 Halliwell, (1989) Prog Crystal Growth Charact, 19, p. 249 Morelhão, Cardoso, Mosaic Spread of the Heteroepitaxial Structures from Renninger Scan (1992) MRS Proceedings, 262, p. 171 Rakennus, Hakkarainen, Tappura, Pessa, Proc 6th European Conference on MBE and Related Growth Methods (1991) Paper Fo4, , Tampere, Finland Riesz, Lischka, Rakennus, Hakkarainen, Pesek, (1991) J Crystal Growth, 114, p. 127. , and unpublished work Riesz, Rakennus, Hakkarainen, Pessa, (1991) J Vac Sci Technol, 9 B, p. 176 Morelhão, Cardoso, Structural properties of heteroepitaxial systems using hybrid multiple diffraction in Renninger scans (1993) Journal of Applied Physics, 73, p. 4218 Adachi, (1982) J Appl Phys, 53, p. 8775. , see, Thermal expansion coefficients of 6.63 × 10−6 K−1 and 4.56 × 10−6 K−1 for GaAs and InP was used, respectively Riesz, Radnóczi, Pécz, Lischka, Rakennus, Hakkarainen, Pesek, Lischka, The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures (1992) MRS Proceedings, 263, p. 461 Geurts, Finders, Münder, Lüth, Bickmann, Hauck, Brauers, Leiber, (1992) Surf Sci, 269-270, p. 529