Actas de congresos
High Sensitivity Obtained By Three-color Detector Aps-cmos Using Antireflective Coating
Registro en:
Proceedings - Electrochemical Society. , v. 3, n. , p. 201 - 206, 2004.
2-s2.0-17044381743
Autor
Mestanza S.N.M.
Biasotto C.
Costa A.C.
Dias G.O.
Doi I.
Diniz J.A.
Swart J.W.
Institución
Resumen
In this work we report the results of the fabrication and simulation of antireflective coating (ARC) of SiO2 deposited on a silicon substrate, to various thickness. We found that for a thickness of 100nm of SiO2 ARC we have high transmittance on a broad spectral range 500-1000nm. We also obtained maximum transmittance in the three basic colors for the thickness value of 70nm, with values that oscillate between 80 e 85 %. However the values are almost punctual and are in small spectral range of +/- 30nm. The film thickness between 100 and 420 nm were found by ellipsometry by using a fixed refractive index of 1.46. The ARCs were obtained from the plasma source of the Electron Cyclotron Resonance-Chemical Vapor Deposition (ECR-CVD), at room temperature. Spectroscopic properties of SiO2 films, studied through Fourier transform infrared spectroscopy (FTIR), revealed a high structural quality and the presence of Si-O bonds. 3
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