dc.creatorDa Silva A.J.R.
dc.creatorFazzio A.
dc.creatorDos Santos R.R.
dc.creatorOliveira L.E.
dc.date2004
dc.date2015-06-26T14:24:21Z
dc.date2015-11-26T14:13:23Z
dc.date2015-06-26T14:24:21Z
dc.date2015-11-26T14:13:23Z
dc.date.accessioned2018-03-28T21:14:06Z
dc.date.available2018-03-28T21:14:06Z
dc.identifier
dc.identifierJournal Of Physics Condensed Matter. , v. 16, n. 46, p. 8243 - 8250, 2004.
dc.identifier9538984
dc.identifier10.1088/0953-8984/16/46/011
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-10044227463&partnerID=40&md5=e5cc8dca52d00786c22bd4d7073fc2be
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/94426
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/94426
dc.identifier2-s2.0-10044227463
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1242257
dc.descriptionWe have performed ab initio calculations within the density-functional theory for Ga1-xMnxAs As diluted semiconductors. Total energy results unambiguously show that a quasi-localized ↓ hole, with predominant p-like character, surrounds the fully polarized Mn ↑ d 5-electrons. The calculations indicate that the holes form a relatively dispersionless impurity band, thus rendering effectivemass descriptions of hole states open to challenge. We obtain estimates both for the s = 1/2 hole and S = 5/2 Mn exchange coupling, and for the distance dependence of the effective Mn-Mn exchange interaction. The results demonstrate that the effective Mn-Mn coupling is always ferromagnetic, and thus non-RKKY, and is intermediated by the antiferromagnetic coupling of each Mn spin to the holes.
dc.description16
dc.description46
dc.description8243
dc.description8250
dc.descriptionOhno, H., Munekata, H., Penney, T., Von Molnàr, S., Chang, L.L., (1992) Phys. Rev. Lett., 68, p. 2664
dc.descriptionOhno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Katsumoto, S., Iye, Y., (1996) Appl. Phys. Lett., 69, p. 363
dc.descriptionVan Esch, A., Van Bockstal, L., De Boeck, J., Verbanck, G., Van Steenbergen, A.S., Wellmann, P.J., Grietens, B., Borghs, G., (1997) Phys. Rev. B, 56, p. 13103
dc.descriptionMatsukura, F., Ohno, H., Shen, A., Sugawara, Y., (1998) Phys. Rev. B, 57, pp. R2037
dc.descriptionOhno, H., (1999) J. Magn. Magn. Mater., 200, p. 110
dc.descriptionPotashnik, S.J., Ku, K.C., Chun, S.H., Berry, J.J., Samarth, N., Schiffer, P., (2001) Appl. Phys. Lett., 79, p. 1495
dc.descriptionEdmonds, K.W., Wang, K.Y., Campion, R.P., Neumann, A.C., Foxon, C.T., Gallagher, B.L., Main, P.C., (2002) Appl. Phys. Lett., 81, p. 3010
dc.descriptionSeong, M.J., Chun, S.H., Cheong, H.M., Samarth, N., Mascarenhas, A., (2002) Phys. Rev. B, 66, p. 033202
dc.descriptionAsklund, H., Iliver, L., Kanski, J., Sadowski, J., (2002) Phys. Rev. B, 66, p. 115319
dc.descriptionYu, K.M., Walukiewicz, W., Wojtowicz, T., Kuryliszyn, I., Liu, X., Sasaki, Y., Furdyna, J.K., (2002) Phys. Rev. B, 65, pp. R201303
dc.descriptionYu, K.M., Walukiewicz, W., Wojtowicz, T., Lim, W.L., Liu, X., Sasaki, Y., Dobrowolska, M., Furdyna, J.K., (2002) Appl. Phys. Lett., 81, p. 844
dc.descriptionPotashnik, S.J., Ku, K.C., Mahendiran, R., Chun, S.H., Wang, R.F., Samarth, N., Schiffer, P., (2002) Phys. Rev. B, 66, p. 012408
dc.descriptionMoriya, R., Munekata, H., (2003) J. Appl. Phys., 93, p. 4603
dc.descriptionDos Santos, R.R., Oliveira, L.E., D'Albuquerque e Castro, J., (2002) J. Phys.: Condens. Matter, 14, p. 3751
dc.descriptionDos Santos, R.R., Oliveira, L.E., D'Albuquerque e Castro, J., (2003) J. Appl. Phys., 93, p. 1845
dc.descriptionHayashi, T., Hashimoto, Y., Katsumoto, S., Iye, Y., (2001) Appl. Phys. Lett., 78, p. 1691
dc.descriptionDietl, T., Haury, A., Merle D'Aubigné, Y., (1997) Phys. Rev. B, 55, pp. R3347
dc.descriptionOhno, H., Matsukura, F., (2001) Solid State Commun., 117, p. 179
dc.descriptionOkabayashi, J., Kimura, A., Rader, O., Mizokawa, T., Fujimori, A., Hayashi, T., Tanaka, M., (2001) Phys. Rev. B, 64, p. 125304
dc.descriptionSingley, E.J., Kawakami, R., Awschalom, D.D., Basov, D.N., (2002) Phys. Rev. Lett., 89, p. 097203
dc.descriptionDietl, T., Ohno, H., Matsukura, F., (2001) Phys. Rev. B, 63, p. 195205
dc.descriptionAbolfath, M., Jungwirth, T., Brum, J., MacDonald, A.H., (2001) Phys. Rev. B, 63, p. 054418
dc.descriptionSanvito, S., Ordejón, P., Hill, N.A., (2001) Phys. Rev. B, 63, p. 165206
dc.descriptionBouzerar, G., Kudrnovský, J., Berqvist, L., Bruno, P., (2003) Phys. Rev. B, 68, pp. 081203R
dc.descriptionSandratskii, L.M., Bruno, P., (2002) Phys. Rev. B, 66, p. 134435
dc.description22nd Int. Conf. on Defects in Semiconductors (Aarhus, Denmark, 2003), , Preliminary results were presented at the
dc.descriptionDa Silva, A.J.R., Fazzio, A., Dos Santos, R.R., Oliveira, L.E., (2003) Physica B, 340-342, p. 874
dc.descriptionVanderbilt, D., (1990) Phys. Rev. B, 41, p. 7892
dc.descriptionKresse, G., Hafner, J., (1993) Phys. Rev. B, 47, pp. R558
dc.descriptionKresse, G., Furthmüller, J., (1996) Phys. Rev. B, 54, p. 11169
dc.descriptionKresse, G., Joubert, D., (1999) Phys. Rev. B, 59, p. 1758
dc.descriptionLinnarsson, M., Janzén, E., Monemar, B., Kleverman, M., Thilderkvist, A., (1997) Phys. Rev. B, 55, p. 6938
dc.descriptionChapman, R.A., Hutchinson, W.G., (1967) Phys. Rev. Lett., 18, p. 443
dc.descriptionSchneider, J., Kaufmann, U., Wilkening, W., Baeumler, M., Kohl, F., (1987) Phys. Rev. Lett., 59, p. 240
dc.descriptionZhao, Y.-J., Mahadevan, P., Zunger, A., (2004) Appl. Phys. Lett., 84, p. 3753
dc.descriptionZhao, Y.-J., Shishidou, T., Freeman, A.J., (2003) Phys. Rev. Lett., 90, p. 047204
dc.descriptionSanyal, B., Bengone, O., Mirbt, S., (2003) Phys. Rev. B, 68, p. 205210
dc.languageen
dc.publisher
dc.relationJournal of Physics Condensed Matter
dc.rightsfechado
dc.sourceScopus
dc.titleFirst Principles Study Of The Ferromagnetism In Ga1-xmn Xas Semiconductors
dc.typeArtículos de revistas


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