Artículos de revistas
Micro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High Temperature
Registro en:
Materials Science And Engineering B: Solid-state Materials For Advanced Technology. , v. 112, n. 2-3 SPEC. ISS., p. 160 - 164, 2004.
9215107
10.1016/j.mseb.2004.05.025
2-s2.0-4344561556
Autor
Teixeira R.C.
Doi I.
Zakia M.B.P.
Diniz J.A.
Swart J.W.
Institución
Resumen
In this paper the residual stress of polycrystalline silicon (poly-Si) grown at high temperature in a vertical LPCVD reactor has been studied using micro-Raman spectroscopy. The samples were prepared on Si(1 0 0) n-type substrates coated with 100 nm of SiO2. The films were deposited in the temperature range of 750-900°C at pressures of 5 and 10 Torr. The as-deposited poly-Si films are highly crystalline and show tensile stress. Micro-Raman measurements show that the residual stress is reduced as the deposition temperature is increased and, above 800°C, tensile stress is reduced to less than 150 MPa. These results indicate that high quality, high crystalline and low strained poly-Si films can be obtained in this type of reactor using higher deposition temperature. © 2004 Elsevier B.V. All rights reserved. 112 2-3 SPEC. ISS. 160 164 Kamins, T.I., (1998) Polycrystalline Silicon for Integrated Circuit and Displays, 2nd Ed., , Kluwer Academic Publishers Kaltsas, G., Nassiopoulos, A.G., Siakavellas, M., Anastassakis, E., (1998) Sens. Actuators A, 68, pp. 429-434 French, P.J., Poenar, D., Malleé, R., Sarro, P.M., (1996) J. Electromech. Syst., 5 (3) Zhang, X., Zhang, T.Y., Wong, M., Zohar, Y., (1998) J. Electromech. Syst., 7 (4), pp. 356-364 Benrakkad, M.S., Benitez, M.A., Esteve, J., López-Vellegas, J.M., Samitier, J., Morante, J.R., (1995) J. Michomech. Microeng., 5, pp. 132-135 De Wolf, I., (1996) Semiconductor Sci. Technol., 11, pp. 139-154 Jawhari, T., (2000) Analysis, 28 (1), pp. 15-22 Siakavellas, M., Anastassakis, E., Kaltsas, G., Nassiopoulos, A.G., (1998) Microelectron. Eng., 41-42, pp. 469-472 Lengsfeld, P., (2001) Sucessive Laser Crystalization of Doped and Undoped A-Si:H, , Doctor Thesis, Technischen Universitát, Berlin Voutsas, A.T., Hatalis, M.K., Boyce, J., Chiang, A., (1995) J. Appl. Phys., 78 (12), pp. 6999-7006 Münster, P., Sarret, M., Mohanned-Brahinm, T., Coulon, N., Mevelle, J.Y., (2002) Philos. Mag. B, 82 (15), pp. 1695-1701 Nickel, N.H., Lengsfeld, P., Sieber, I., (2000) Phys. Rev. B, 61 (23), pp. 15.558-15.561 Clark, S., (1996), http://cmt.dur.ac.uk/sjc/thesis/thesis/thesis.html, 20/10/2003