Actas de congresos
Mechanisms Of Silicon Nitride Etching By Electron Cyclotron Resonance Plasmas Using Sf6- And Nf3-based Gas Mixtures
Registro en:
Journal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films. , v. 22, n. 4, p. 1513 - 1518, 2004.
7342101
10.1116/1.1701858
2-s2.0-4344582265
Autor
Reyes-Betanzo C.
Moshkalyov S.A.
Ramos A.C.S.
Swart J.W.
Institución
Resumen
The results of a comparitive study of SiNx, SiO2 and Si etching in SF6 - and NF3 --based gas mixtures were presented using a high-density electron cyclotron resonance (ECR) plasma. It was shown that higher selectivities of SiNx etching over SiO2 (up to ∼100) were achieved with NF3, while higher selectivities over Si were obtained with SF6-based mixtures. The plasma and surface processes responsible for etching were analyzed. The mechanisms of nitride etching in NF3-based plasmas were also proposed. 22 4 1513 1518 Li, Y.X., French, P.J., Wolffenbuttel, R.F., (1995) J. Vac. Sci. Technol. B, 13, p. 2008 Kastenmeier, B.E.E., Matsuo, P.J., Beulens, J.J., Oehrlein, G.S., (1996) J. Vac. Sci, Technol. A, 14, p. 2802 Blain, M.G., Meisenheimer, T.L., Stevens, J.F., (1996) J. Vac. Sci. Technol. A, 14, p. 2151 Kastenmeier, B.E.E., Matsuo, P.J., Oehrlein, G.S., (1999) J. Vac. Sci. Technol. A, 17, p. 3179 Kastenmeier, B.E.E., Matsuo, P.J., Oehrlein, G.S., Ellefson, R.E., Frees, L.C., (2001) J. Vac. Sci. Technol. A, 19, p. 25 Reyes-Betanzo, C., Moshkalyov, S.A., Swart, J.W., Ramos, A.C.S., (2003) J. Vac, Sci. Technol. A, 21, p. 461 Hsueh, H.P., McGrath, R.T., Ji, B., Felker, S., Langan, J.G., Karwacki, E.J., (2001) J. Vac. Sci. Technol. B, 19, p. 1346 Hargis Jr., P.J., Greenberg, K.E., (1990) J. Appl. Phys., 67, p. 6 Moshkalyov, S.A., Diniz, J.A., Swart, J.W., Tatseh, P.J., Machida, M., (1997) J. Vac. Sci. Technol. B, 15, p. 2682 Nahorny, J., Ferreira, C.M., Gordiets, B., Pagnon, D., Touzeau, M., Vialle, M., (1995) J. Phys. D, 28, p. 738 Guerra, V., Loureiro, J., (1995) J. Phys. D, 28, p. 1903 Lide, D.R., (1990) CRC Handbook of Chemistry and Physics, 70th Ed., , CRC Press, Boca Raton, FL Perrin, J., Meot, J., Siefert, J.M., Schmitt, J., (1990) Plasma Chem. Plasma Process., 10, p. 571 Kastenmeier, B.E.E., Matsuo, P.J., Oehrlein, G.S., Langan, J.G., (1998) J. Vac. Sci. Technol. A, 16, p. 2047