Actas de congresos
Microwave Enhanced Silicon Koh Etching
Registro en:
Proceedings - Electrochemical Society. , v. PV 2005-08, n. , p. 408 - 415, 2005.
2-s2.0-31744434279
Autor
Fischer C.
Diniz J.A.
Institución
Resumen
A microwave source system have been used to increase silicon etch rate in KOH solution by a factor of about 2, when compared to conventional process. In this work, using a commercial microwave oven (operated at 850W), a home-made microwave system and a polytetrafluoroethylene (PTFE) reactor, where the silicon etching is processed with KOH-water solution, were developed. Silicon wafers, previously oxidized and patterned with standard photo-lithographic process, were etched using 2.5, 5 and 10 M KOH-water solution. The process temperature was manually controlled. The etch solution passes through a heat exchanger for cooling purpose and is pumped back to the reactor. Etch rate of about 1.38 μm/min for the [100] silicon crystal plane and 2.7 nm/min for thermal silicon oxide was achieved. PV 2005-08
408 415 Dziuban, J.A., (2000) Sensor and Actuators A, 85, p. 133 Dziuban, J.A., Górecka-Drzazga, A., (2001) J. Vac. Sci. Technol. B, 19, p. 897 Seidel, H., Csepregi, L., Heuberger, A., Baumgärtel, H., (1990) J. Electrochem. Soc., 137, p. 3612 Seidel, H., Csepregi, L., Heuberger, A., Baumgärtel, H., (1990) J. Electrochem. Soc., 137, p. 3626 Bean, K.E., (1978) IEEE Trans, on Electron Devices, ED-25, p. 1185 Kovacs, G.T.A., Maluf, N.I., Petersen, K.E., (1998) Proc. IEEE, 86, p. 1536 Petersen, K.E., (1982) Proc. IEEE, 70, p. 420 Williams, K.R., Muller, R.S., (1996) Journal of Microelectromechanical Systems, 5, p. 256. , December Williams, K.R., Gupta, K., Wasilik, M., (2003) Journal of Microelectromechanical Systems, 12, p. 761 Madou, M.M., (2002) "Fundamentals of Microfabrication - The Science of Miniaturization", Second Edition, , CRC Press