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A semiconductor strain gage tactile transducer
(Institute of Electrical and Electronics Engineers (IEEE), 2001-01-01)
This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured ...
A semiconductor strain gage tactile transducer
(Institute of Electrical and Electronics Engineers (IEEE), 2001-01-01)
This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured ...
Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
A semiconductor strain gage tactile transducer
(Institute of Electrical and Electronics Engineers (IEEE), 2014)