En este trabajo se fabricaron dispositivos basados en silicio poroso nanoestructurado, con el fin de estudiar y caracterizar sus propiedades de transporte eléctrico, buscando acumular datos que permitan en un futuro ...

A new methodology for modeling and implementation of RF power amplifiers is shown. Starting from pulsed measurements, we demonstrated that we can predict small and large signal performances considering frequency dispersion ...

The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker ...

In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among ...