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Amorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature
(2000-01-01)
This paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol-gel-like process in powder and thin film form. The optical property ...
Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
(Amer Inst Physics, 2013-01)
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study ...
Semiconducting Sn(3)O(4) nanobelts: Growth and electronic structure
(AMER INST PHYSICS, 2010)
The study of structures based on nonstoichiometric SnO(2-x) compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn(3)O(4) ...
Photodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique
(1998-12-01)
Thin films of undoped and Sb-doped (2 atg%) SnO2 have been prepared by sol-gel dip-coating technique on borosilicate glasses. Variation of photoconductivity excitation with wavelength and optical absorption indicate indirect ...
Photodesorption and electron trapping in n-type SnO2 thin films grown by dip-coating technique
(1998-12-01)
Thin films of undoped and Sb-doped (2 atg%) SnO2 have been prepared by sol-gel dip-coating technique on borosilicate glasses. Variation of photoconductivity excitation with wavelength and optical absorption indicate indirect ...
Optical and Structural Characterization of ZnO Films Deposited by Chemical Bath and Activated by means of Microwaves
(2012-11-27)
Abstract. Zinc oxide (ZnO) is a direct, wide band gap semiconductor material having many promising properties for UV/blue optoelectronics, transparent electronics, spintronic devices and sensor ...
Theoretical investigation of atomic and electronic structures of Ga(2)O(3)(ZnO)(6)
(AMER PHYSICAL SOC, 2009)
Transparent conducting oxides (TCO) are widely used in technological applications ranging from photovoltaics to thin-film transparent field-effect transistors. In this work we report a first-principles investigation, based ...
Influência da temperatura e do tipo de substrato em filmes de GaN depositados por magnetron sputtering reativo
(Universidade Estadual Paulista (Unesp), 2012-02-24)
Semicondutores de gap largo são materiais de grande interesse devido às suas amplas aplicações tecnológicas. Entre os semicondutores de gap largo se destaca o GaN que apresenta características desejáveis para tais aplicações, ...