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Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band
(Elsevier, 2007-02-15)
We present the electronic structure calculation of two closely p-type -doped quantum wells within the lines of the Thomas–Fermi–Dirac (TFD) theory. The distance between the impurity planes as well as the impurity density ...
Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure
(Elsevier, 2008)
The study of the electronic structure in GaAs-based delta-doped field effect transistors under applied hydrostatic pressure is presented. A combination of the depletion approximation and the local density Thomas-Fermi ...
Crecimiento de FeN sobre GaNFeN growing over GaN
(CICESE, 2012)
Ground state of fermions in quasi-1D honeycomb optical lattices
(Universidad Nacional de ColombiaBogotá - Ciencias - Maestría en Ciencias - FísicaFacultad de CienciasBogotá, ColombiaUniversidad Nacional de Colombia - Sede Bogotá, 2022)
Lattice models (tight-binding) for many-body systems give a good theoretical
and experimental framework to study quantum phase transitions presented in several
strongly correlated materials at low temperature. In general, ...
Excited states of exciton-polariton condensates in 2D and 1D harmonic traps
(American Physical Society, 2014-05)
We present a theoretical description of Bogolyubov-type excitations of exciton-polariton Bose-Einstein condensates (BECs) in semiconductor microcavities. For a typical two-dimensional (2D) BEC we focus on two limiting ...
Crecimiento de FeN sobre GaNFeN growing over GaN
(CICESE, 2012)