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Vortex dynamics in Bose-Einstein condensates: Numerical calculations
(SP MAIK Nauka/Interperiodica, 2009-04)
We numerically study properties of the dynamics of vortices in nonrotating Bose-Einstein condensates in the Thomas-Fermi regime. On the one hand, we compute the vortex energy as a function of its position and we predict, ...
Vortices in two-component Bose-Einstein condensates
(IOP Publishing, 2005-12)
We study the spatial distribution of particles in two-component Bose-Einstein condensates containing vortices. We show that the form in which the species are arranged inside the condensate may be easily understood using ...
The nanoscopic principles of capacitive ion sensing interfaces
(2020-02-21)
Herein we discuss the operational principles of molecular interfaces that specifically recruit ions from an electrolyte solution and report this in a reagentless capacitive manner. At low ionic occupancy the response of ...
Breakup of rotating asymmetric quartic-quadratic trapped condensates
(Amer Physical Soc, 2020-12-29)
The threshold conditions for a rotating pancakelike asymmetric quartic-quadratic confined condensate to break in two localized fragments, as well as to produce a giant vortex at the center within the vortex-pattern ...
Analytic models for the density of a ground-state spinor condensate
(2015-08-12)
We demonstrate that the ground state of a trapped spin-1 and spin-2 spinor ferromagnetic Bose-Einstein condensate (BEC) can be well approximated by a single decoupled Gross-Pitaevskii (GP) equation. Useful analytic models ...
Breakup of rotating asymmetric quartic-quadratic trapped condensates
(2020-12-29)
The threshold conditions for a rotating pancakelike asymmetric quartic-quadratic confined condensate to break in two localized fragments, as well as to produce a giant vortex at the center within the vortex-pattern ...
Ion solvation energies from density functional theory
(1991)
Electrostatic solvation energies of singly charged monoatomic ions may be predicted from the knowledge of an electrostatic potential buildup from a physically meaningful ionic radius. Since the asymptotic behavior of the ...
k p calculations of p-type d-doped quantum wells in Si
(Elsevier, 2008-06)
We present the hole subband structure calculation in single and double p-type δ-doped quantum wells in Si based on the Luttinger–Kohn Hamiltonian. The valence band bending and the hole states are calculated within the ...
Subband and transport calculations in double -type -doped quantum wells in Si
(American Institute of Physics, 2006-02)
The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in
Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the
subband level structure. The ...