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Nanoscale origins of super-capacitance phenomena
(2019-02-28)
We review the origins of capacitive phenomena at the nanoscale to demonstrate that electrochemistry cannot be understood without a critical re-reading of nanoscale electronics, and vice-versa. The fundamentals are stated ...
Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential
(IOP PUBLISHING, 2009)
We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp3s ∗ tight-binding approximation including spin for the hole level ...
Self-trapping of Fermi and Bose gases under spatially modulated repulsive nonlinearity and transverse confinement
(2013-04-04)
We show that self-localized ground states can be created in the spin-balanced gas of fermions with repulsion between the spin components, whose strength grows from the center to periphery, in combination with the ...
Self-trapping of Fermi and Bose gases under spatially modulated repulsive nonlinearity and transverse confinement
(2013-04-04)
We show that self-localized ground states can be created in the spin-balanced gas of fermions with repulsion between the spin components, whose strength grows from the center to periphery, in combination with the ...