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Ohmic contacts with palladium diffusion barrier on III-V semiconductors
(2012-11-27)
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the ...
Preparation and structural characterization of hybrid composites of semiconductor oxides with amorphous carbon
(2018-01-01)
Organic/inorganic hybrids composites type have been reported as an alternative for the preparation of multifunctional materials with superior properties to those of individual constituents. In this work, hybrid composites ...
Hole concentration in a diluted ferromagnetic semiconductor
(Iop Publishing LtdBristolInglaterra, 2002)
COEXISTENCE OF CONDUCTING AND NONCONDUCTING PHASES ON THE METALLIC SIDE OF THE MOTT TRANSITION IN PHOTOINJECTED SEMICONDUCTORS
(Pergamon-elsevier Science LtdOxfordInglaterra, 1992)
Hall effect: the role of nonequilibrium charge carriersHall effect: the role of nonequilibrium charge carriers
(Revista Mexicana de Física, 2011)
Impurity states in the narrow band-gap semiconductor n-type InSb
(1996)
We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant ...
Below-bandgap excitation of bulk semiconductors by twisted light
(Europhysics Letters, 2010-07)
I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of ...
Simulation and measurements of current-injected gain control in semiconductor optical amplifiers
(John Wiley & Sons IncHobokenEUA, 2004)