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Raman scattering from fully strained Ge1 -xSnx (x 0.22) alloys grown on Ge(001) 2 x 1 by low-temperature molecular beam epitaxy
(2012-12-17)
Fully strained single-crystal Ge 1 -xSnx alloys (xo;;;0.22) deposited on Ge(001)2 X 1 by low-temperature molecular beam epitaxy have been studied by Raman scattering. The results are characterized by a ...
Evolution of the properties of PtGe/Al2O3 reforming catalysts with Ge content
(Elsevier Science, 2007-08)
The effect of the Pt/Ge atomic ratio on the catalytic activity of PtGe/Al2O3 catalysts used in n-heptane reforming was studied. The samples were prepared by the coimpregnation method on chlorinated alumina. The platinum ...