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Sintering and Microwave Properties of Zirconium Tin Titanate Doped with Select Oxides
(SPRINGERNEW YORK, 2012)
Zirconium tin titanate (ZST) is often used as a dielectric resonator for the fabrication of microwave devices. Pure compositions do not sinter easily by solid state sintering; therefore, sintering ZST requires sintering ...
SnO 2 ceramics with low electrical resistivity obtained by microwave sintering
(2011-08-01)
The main aim of this study was to develop dense and conducting SnO 2 ceramics without precipitated phases on the grain boundaries, which was verified using field emission scanning microscopy (FE-SEM) coupled with an ...
SnO 2 ceramics with low electrical resistivity obtained by microwave sintering
(2011-08-01)
The main aim of this study was to develop dense and conducting SnO 2 ceramics without precipitated phases on the grain boundaries, which was verified using field emission scanning microscopy (FE-SEM) coupled with an ...
Effect of atmosphere and dopants on sintering of SnO2
(2002-12-01)
Tin oxide is an n type semiconductor material with a high covalent behavior. Mass transport in this oxide depends on the surface state promoted by atmosphere or by the solid solution of aliovalent oxide doping. The sintering ...
Effects of powder preparation and sintering procedure on microstructure and dielectric properties of PLZT ceramics
(Int Inst Science Sintering (i I S S), 2003-09-01)
PLZT ceramics belong to one of the very important groups of functional materials that make a basis for the production of a large range of electronic devices. The microstructure and properties of ceramics depend on the ...
High-pressure assisted sintering of Ti-20Si-10B and Ti-10Si-5B powders
(2012-11-26)
This work presents the structural characterization of Ti-10Si-5B and Ti-20Si-10B (at-%) alloys produced by high-pressure assisted sintering. Sintering was performed in air at 1100 and 1200°C for 60 s using pressure levels ...
High-pressure assisted sintering of Ti-20Si-10B and Ti-10Si-5B powders
(2012-11-26)
This work presents the structural characterization of Ti-10Si-5B and Ti-20Si-10B (at-%) alloys produced by high-pressure assisted sintering. Sintering was performed in air at 1100 and 1200°C for 60 s using pressure levels ...