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Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
(IOP Publishing, 2003-07)
The results of a study of phase transformation in hydrogenated microcrystalline silicon thin films prepared from hydrogen-diluted silane and exposed to an Ar+ laser light are presented. Through Raman spectroscopy, it was ...
Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
(Wiley VCH Verlag, 2007-12)
In this work, a series of boron doped microcrystalline silicon films (µc-Si:H (B)) were deposited by plasma-enhanced chemical vapor deposition (PECVD), using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a ...
A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
(Elsevier Science Sa, 2006-12)
Microcrystalline silicon solar cells with intrinsic layer thicknesses between 500 and 3000 nm deposited using the hot-wire CVD techniqueare investigated, combining experimental characterisation with computer simulations. ...
Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method
(Polish Academy of Sciences. Institute of Physics, 2014-02)
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. ...
Structural and optical properties of compensated microcrystalline silicon films
(Sociedad Mexicana de Fisica, 2007-12)
Boron-doped microcrystalline silicon films were deposited in a plasma enhanced chemical vapor deposition (PECVD) system using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The effects of the Boron ...
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates
(glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 ◦C for up to
14 h. The annealed ...
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon ( a-Si:H) films which were deposited on two different sub
strates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250"( for up to
14 h.The ...
Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
(Elsevier B.V., 2008)
Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
(Elsevier B.V., 2008)
Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method
(2012-12-17)
Microcrystalline-amorphous doped hydrogenated silicon (tc a-Si:H) samples were prepared by using plasma
enhanced chemical vapor deposition (PECVD) method. The samples were deposited on coming substrates at 270 °C and
then ...