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On the possibility of breaking the heterodyne detection quantum noise limit with cross-correlation
(Institute of Electrical and Electronics Engineers Inc., 2018)
The cross-correlation sensitivity of two identical balanced photodiode heterodyne receivers
is characterized. Both the balanced photodiodes receive the same weak signal split up equally, a situation
equivalent to an ...
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
(2021-09-01)
In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and ...
Modeling and Compensating Temperature-Dependent Non-Uniformity Noise in IR Microbolometer Cameras
(2016)
Images rendered by uncooled microbolometer-based infrared (IR) cameras are severely degraded by the spatial non-uniformity (NU) noise. The NU noise imposes a fixed-pattern over the true images, and the intensity of the ...
Fiber-based Infrared Heterodyne Technology for the PFI: On the possibility of breaking the noise temperature quantum limit with cross-correlation
(2018)
We present concept and first experimental lab results for a novel heterodyne correlation receiver architecture and demonstrate that it can surpass the standard quantum limit (SQL) for the noise temperature by "correlating ...
Plug-and-play transceiver with high gain and ultra low noise figure for IEEE 802.15.4 application
(2019-06)
This paper shows the design and performance simulation of a 2.4 GHz plug-
and-play transceiver based on a high speed switch for IEEE 802.15.4 applications. The
electrical design was optimized taking into account the ...
Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors
(2020-04-24)
This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through ...
Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures
(Ieee-inst Electrical Electronics Engineers Inc, 2021-07-01)
The analysis of vertically stacked nanosheet (NS) n-type transistors with two different metal gate-stacks (with a total thickness of 7.5 and 4.7 nm) is presented in this work from room temperature to 200 degrees C. The ...
Variation of the noise levels in the baseline of an adsorption microcalorimeter
(Springer, 2009-08)
This work shows the results obtained to determine the noise in the baseline of a specially designed Tian Calvet-Type adsorption microcalorimeter. The results show that noise levels vary from 0.5 to 10 μV, which were evaluated ...
Avaliação do ruído e temperatura na aplicação de concreto betuminoso usinado quente: CBUQ
(Universidade Tecnológica Federal do ParanáCuritibaDepartamento Acadêmico de Construção Civil, 2014-04-15)
With this research we sought to assess the working conditions under which employees paving exclusively evaluating the enforcement team of asphalt concrete hot machined, are set forth with respect to noise and temperature. ...