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Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
Photodetection With Gate-Controlled Lateral BJTs from Standard CMOS Technology
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2013)
Detecção de H2 em dispositivos de monocamada de MoS2 e estudo de suas propriedades elétricas em altas temperaturas
(Universidade Federal de Minas GeraisBrasilICX - DEPARTAMENTO DE FÍSICAPrograma de Pós-Graduação em FísicaUFMG, 2019-04-05)
Among the 2D materials, molybdenum disulfide (MoS2) has attracted scientific interest due to its electronic, optical and structural properties. Several studies demonstrate that MoS2 can be applied in phototransistors, ...