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Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
(Institute of Electrical and Electronics Engineers Inc., 2014)
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results ...
Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
(Sociedade Brasileira Fisica, 2006-09-01)
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films ...
Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
(Sociedade Brasileira Fisica, 2006-09-01)
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films ...
Synthesis of mussel-inspired polydopamine-gallium nanoparticles for biomedical applications
(2021-01-01)
Aim: To established a simple, controlled and reproducible method to synthesize gallium (Ga)-coated polydopamine (PDA) nanoparticles (NPs). Materials & methods: PDA NPs were synthesized in alkali medium with posterior Ga ...