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Imaging the electrostatic landscape of unstrained self-assemble GaAs quantum dots

Universidade Estadual Paulista (UNESP); Brazilian Center for Research in Energy and Materials (CNPEM); Physics and Materials Science Research Unit; Universidade Federal de Viçosa (UFV); Eindhoven University of Technology (TU/e); Universidade Estadual de Campinas (UNICAMP) (2022-04-16)

Unstrained GaAs quantum dots are promising candidates for quantum information devices due to their optical properties, but their electronic properties have remained relatively unexplored until now. In this work, we ...

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Universidade de São Paulo (USP); Univ Gesamthsch Paderborn; Univ Jena; Universidade Estadual Paulista (Unesp) (American Institute of Physics (AIP), 2002-02-04)

Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam ...

Fabrication And Optical Properties Of Strain-free Self-assembled Mesoscopic Gaas Structures

Covre da Silva; Saimon Filipe; Mardegan; Thayna; de Araujo; Sidnei Ramis; Ospina Ramirez; Carlos Alberto; Kiravittaya; Suwit; Couto; Odilon D. D.; Jr.; Iikawa; Fernando; Deneke; Christoph (SpringerNew York, 2017)

Theoretical study of strain-induced ordering in cubic InxGa1-xN epitaxial layers

Teles, LK; Ferreira, LG; Scolfaro, LMR; Leite, JR (American Physical SocCollege PkEUA, 2004)