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On the avalanche multiplication mechanism in SPICE simulations of high-frequency bipolar transistors with thin basewidths and low breakdown voltages
(Elsevier Gmbh, Urban & Fischer VerlagJenaAlemanha, 2005)
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor
(2021-08-23)
— In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the ...
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
(2021-01-01)
Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) ...
Cryogenic Operation of Junctionless Nanowire Transistors
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2011)
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and ...
Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2012)
A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian ...
Junctionless Multiple-Gate Transistors for Analog Applications
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2011)
This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. ...
Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2010)
The harmonic distortion (HD) exhibited by un-strained and biaxially strained fin-shaped field-effect transistors operating in saturation as single-transistor amplifiers has been investigated for devices with different ...
Water-gated organic transistors on polyethylene naphthalate films
(2016-06-01)
Water-gated organic transistors have been successfully exploited as potentiometric transducers in a variety of sensing applications. The device response does not depend exclusively on the intrinsic properties of the active ...
Ultrahigh-Gain Organic Electrochemical Transistor Chemosensors Based on Self-Curled Nanomembranes
(2021-01-01)
Organic electrochemical transistors (OECTs) are technologically relevant devices presenting high susceptibility to physical stimulus, chemical functionalization, and shape changes—jointly to versatility and low production ...
Influence of paper surface characteristics on fully inkjet printed PEDOT:PSS-based electrochemical transistors
(2021-12-01)
Paper electronics has emerged as an ecofriendly, light, low-cost, and recyclable material for the fabrication of flexible and printed transistors. In this study, we present fully printed organic electrochemical transistors ...