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The influence of thermal treatment on the preparation of PNM and PMN-PT thin films
(Elsevier B.V., 2003-03-01)
Ferroelectric thin films belong to a class of materials with great technological importance in optic fibers, micro-electromechanical systems, and microprocessors and computers memories.The (1-x)PbMg1/3Nb2/3O3(x)PbTiO3 ...
The influence of thermal treatment on the preparation of PNM and PMN-PT thin films
(Elsevier B.V., 2003-03-01)
Ferroelectric thin films belong to a class of materials with great technological importance in optic fibers, micro-electromechanical systems, and microprocessors and computers memories.The (1-x)PbMg1/3Nb2/3O3(x)PbTiO3 ...
The influence of thermal treatment on the preparation of PNM and PMN-PT thin films
(Elsevier B.V., 2014)
NICKEL TROPOLONATE COMPLEXES AS PRECURSORS FOR THE DIRECT PHOTODEPOSITION OF NiO THIN FILMS
(Sociedad Chilena de Química, 2004)
Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films
(2013-05-14)
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness ...
Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films
(2013-05-14)
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness ...
Potentialities and practical limitations of absolute neutron dosimetry using thin films of uranium and thorium applied to the fission track dating
(Elsevier B.V., 1999-06-01)
Neutron dosimetry using natural uranium and thorium thin films makes possible that mineral dating by the fission-track method can be accomplished, even when poor thermalized neutron facilities are employed. In this case, ...
Transmission Electron Microscopy study of a GaN thin film grown on Al2O3 by MOCVD
(Instituto Politecnico Nacional, 2013-01-16)