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Photothermal chacaterization of electrochemical etching porous silicon
(Physical Review Letters, 2013-01-16)
Photoacoustic thermal characterization of spark‐processed porous silicon
(Journal of Applied Physics, 2013-01-16)
Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering
(ELSEVIER SCI LTD, 2009)
In this study, oxide and nitride films were deposited at room temperature through the reaction of silicon Sputtered by argon and oxygen ions or argon and nitrogen ions at 250 and 350 W with 0.67 Pa pressure. It was observed ...
Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry
Photocarrier radiometry (PCR) was used to characterize four n-type silicon wafers with different resistivity values in the 1–20 Ω cm range. Simulations of the PCR signal have been performed to study the influence of the ...
Purification of metallurgical silicon by horizontal zone melting
(Elsevier Science BvAmsterdamHolanda, 2012)
A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector
(Elsevier B.V., 2009)
Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation-Porous Silicon (HI-PS) Micromachining Technique
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2008)
This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique-a combination of hydrogen ion ...
Macroporous silicon: efficient antireflective layer on crystalline silicon
(2011-07)
A macroporous silicon layer (ma-PS) electrochemically grown on crystalline silicon surface can be used as an efficient antireflective layer in optical devices as antireflection coating. In this work, we presented the ma-PS ...
FTIR and photoluminescence of annealed silicon rich oxide films
(Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales, 2009)
OPTICAL PROPERTIES OF ZINC SULPHIDE- POROUS SILICON NANOCOMPOSITES
(2012-12-18)
OPTICAL PROPERTIES OF ZINC SULPHIDE- POROUS SILICON NANOCOMPOSITES