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Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry
Photocarrier radiometry (PCR) was used to characterize four n-type silicon wafers with different resistivity values in the 1–20 Ω cm range. Simulations of the PCR signal have been performed to study the influence of the ...
Adsorción de polielectrolitos modificados hidrofóbicamente sobre superficies de silicon wafer modificadas
(Universidad de Chile, 2012)
Nano-modification of Si-wafer surfaces using low-cost ambient air diffuse plasma
(2015-01-01)
In this paper, we demonstrated the cleaning and nano-oxidation of Si-wafer surfaces by atmospheric pressure plasma, generated in ambient air using diffuse coplanar surface barrier discharge. Plasma treatment for one second ...
Interface fracture surface energy of sol–gel bonded silicon wafers by three-point bending
(Springer, 2012)
To probe the interface of silicon sol–gel bonded
wafers we developed in–situ micromechanical bending test
coupled with optical microscopy. The silicon wafers were
bonded together at room temperature using sol–gel ...
Solar cells from upgraded metallurgical-grade silicon purified by metallurgical routes
(Amer Inst PhysicsMelvilleEUA, 2013)
Automated and inexpensive method to manufacture solid- state nanopores and micropores in robust silicon wafers
(Institute of Physics Publishing, 2016-02)
In this work an easy, reproducible and inexpensive technique for the production of solid state nanopores and micropores using silicon wafer substrate is proposed. The technique is based on control of pore formation, by ...
Performance of annealed hybride silicon heterojunctions: a numerical computer study
(American Institute of Physics, 2005-01)
The performance of the standard hydrogenated amorphous silicon carbon–crystalline silicon solar cell is extensively compared with the performance of a hybrid structure subjected to a high-temperature annealing processing. ...
Implantation of metalic ions on silicon wafers with a low energy Plasma Focus device
(2015)
A Plasma Focus device is a pulsed plasma source, where the plasma is generated between concentric cylindrical electrodes in a gaseous atmosphere at low pressure (for example hydrogen). At top end of the anode, a hot and ...