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Rise Time and Gain Fluctuations of an Electrooptical Amplified Switch Based on Multipulse Injection in Semiconductor Optical Amplifiers
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2009)
Semiconductor Optical Amplifier Space Switch With Symmetrical Thin-film Resistive Current Injection
(Ieee-Inst Electrical Electronics Engineers IncPiscataway, 2017)
Simulation and measurements of current-injected gain control in semiconductor optical amplifiers
(John Wiley & Sons IncHobokenEUA, 2004)
Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
(American Institute of Physics, 2013-08)
We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage ...
Simulations on picosecond non-linear electro-optic switching using an ASE-calibrated semiconductor optical amplifier model
(Elsevier Science BvAmsterdamHolanda, 2004)
Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
(Elsevier, 2014-01)
In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different ...
All-optical switching device for infrared based on PbTe quantum dots
(ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD, 2008)
Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the ...
Hundred-picoseconds Electro-optical Switching With Semiconductor Optical Amplifiers Using Multi-impulse Step Injection Current
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2015)
Subband mixing inducing negative resistance
(Elsevier B.V., 1993-05-01)
A new double channel field-effect structure based on delta-doping technology is proposed Resonant tunneling between the channels is employed to control the transport along the interface plane. A realistic simulation is ...