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Geometry effects on the electronic properties of multi-open dots structures
(Ieee-inst Electrical Electronics Engineers Inc, 2015)
Geometry effects on the electronic properties of multi-open dots structures
(Ieee-inst Electrical Electronics Engineers Inc, 1998-11-01)
In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among ...
Geometry effects on the electronic properties of multi-open dots structures
(Ieee-inst Electrical Electronics Engineers Inc, 2015)
A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration
(EMERALD GROUP PUBLISHING LIMITEDBINGLEY, 2012)
Purpose - The purpose of this paper is to develop an efficient numerical algorithm for the self-consistent solution of Schrodinger and Poisson equations in one-dimensional systems. The goal is to compute the charge-control ...
Electron Lande g(parallel to) factor in semiconductor quantum wires
(Elsevier Sci LtdOxfordInglaterra, 2008)
Nonlinear optical absorption of semiconductor quantum wires: Photoexcitation dynamical effects
(American Physical SocCollege PkEUA, 2003)