Now showing items 1-10 of 397
Physical properties characterization ofW03 films grown by hot-filatnent metal oxide deposition
W03 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains thatW03 presents mainly monoclinic crystalline phase. The chemical ...
Optical and structural properties of W03 as a function of the annealing temperature
This work presents a study of effect of annealing temperatme on optical and structural properties of W03 that has been deposited by hot-filament metal oxide deposition (HFMOD). X-ray diffraction shows that the ...
Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
(Amer Inst Physics, 2013-01)
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin ﬁlms by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study ...
Información General: Grupo de Física Aplicada
(SABER ULA, 2006)
Atomic scale characterization of Mn doped InAs/GaAs quantum dots
(AMER INST PHYSICS, 2010)
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent ...
Effect of atmosphere and dopants on sintering of SnO2
Tin oxide is an n-type semiconductor material with a high covalent behavior. Mass transport in this oxide depends on the surface state promoted by atmosphere or by the solid solution of a non-isovalent oxide doping The ...
Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction
(AMER INST PHYSICS, 2009)
An x-ray diffraction method, based on the excitation of a surface diffracted wave, is described to investigate the capping process of InAs/GaAs (001) quantum dots (QDs). It is sensitive to the tiny misorientation of (111) ...
Stabilization of substitutional Mn in silicon-based semiconductors
(American Physical SocCollege PkEUA, 2004)
Direct profiling of polarization fields in nitride semiconductors at nanometric scale using electron holography in the transmission electron microscope
(Universidad Nacional de Ingeniería, 2019)