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Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(2016-11-02)
In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
A CMOS/SOI single-input PWM discriminator for low-voltage body-implanted applications
(Taylor & Francis Ltd, 2002-08-01)
A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique ...
A CMOS/SOI single-input PWM discriminator for low-voltage body-implanted applications
(Taylor & Francis Ltd, 2002-08-01)
A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique ...
A CMOS/SOI single-input PWM discriminator for low-voltage body-implanted applications
(Taylor & Francis Ltd, 2014)
Back gate influence on transistor efficiency of SOI nMOS Ω-gate nanowire down to 10nm width
(2017-11-15)
This paper shows the influence of back gate bias on transistor efficiency of nMOS SOI Ω-gate nanowire, for different width and channel length. Threshold voltage and subthreshold swing present a higher variation with the ...
Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic
(2017-11-15)
This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 μm width and three different channel lengths were exposed to a 600 keV proton radiation ...
Novel Bending Loss Reduction Technique For The Tm Mode In Soi-based Waveguides
(IEEE-Inst Electrical Electronics Engineers IncPiscataway, 2016)
Novel Bending Loss Reduction Technique For The Tm Mode In Soi-based Waveguides
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2016)
Estudo comparativo experimental entre o casamento do SOI nMOSFETs do tipo diamante do tipo diamante e dos seus respectivos convencionais equivalentes
(Centro Universitário da Fei, São Bernardo do Campo, 2019)
Enhanced Model for ZTC in Irradiated and Strained pFinFET
(Ieee, 2017-01-01)
This paper presents for the first time the inclusion of a p-type transistor in the CM (Camilo/Martino) ZTC (Zero Temperature Coefficient) analytical model. It was used for strained SOI pFinFETs submitted to proton radiation, ...