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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
(Institute of Electrical and Electronics Engineers, 2019-08)
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying ...
Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
(Japan Society Applied Physics, 2008-12)
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed ...
The breakdown of Moore's law induced by weak Anderson localization and by size effects in nano-scale metallic connectors
(IOP, 2021)
We report the resistivity measured at temperatures between 5 K and 300 K of a Cu film 63 nm thick with grains that have a diameter d = 10.5 nm on the average. The resistivity of this film is described by the first quantum ...
Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
(American Institute of Physics, 2020-07)
In this work, breakdown transients of multilayered gate oxide stacks were analyzed to study the impact of the interfaces between oxides on the heat dissipation considering an electromigration-based progressive breakdown ...
Resistive switching effect on Al2O3/InGaAs stacks
(Elsevier Science, 2013-09)
The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of ...
A review on dielectric breakdown in thin dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics
(Wiley VCH Verlag, 2019-04-30)
Thin dielectric films are essential components of most micro- and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. ...
Espectro de ação do gene MI-1.2 a Meloidogyne spp. e estudo de populações virulentas e avirulentas em tomateiro: caracterização histopatológica da interação planta-nematoide
(Universidade Federal de Santa MariaBrasilAgronomiaUFSMPrograma de Pós-Graduação em AgronomiaCentro de Ciências Rurais, 2020-08-19)
The tomato crop is parasitized by different pathogens, among them Root-knot nematodes (RKN), genus
Meloidogyne, which have a wide geographical distribution, high reproductive capacity and cause great
damage to the tomato ...
Controlling the breakdown electric field in SnO2 based varistors by the insertion of SnO2 nanobelts
(2017-04-01)
Semiconducting metal oxides have many practical applications, including varistors. Varistors based on SnO2 exhibit both high nonlinear coefficients and high breakdown electric fields. In this work we present a facile means ...
Median Filtering: A New Insight
(Springer, 2017-05)
Median filtering (MF) is a canonical image processing operation truly useful in many practical applications. The MF most appealing feature is its resistance to noise and errors in data, but because the method requires ...
Breakdown of resistance in sweet pepper against Pepper yellow mosaic virus in Brazil
(Universidade de São Paulo (USP), Escola Superior de Agricultura Luiz de Queiroz (ESALQ), 2009-04-01)
Plantas de Capsicum annuum cv. Magali R, resistentes ao Pepper yellow mosaic virus (PepYMV), exibindo sintomas severos de mosaico amarelo, malformação foliar e subdesenvolvimento foram encontradas em plantios na região de ...