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Ratios of UV, PAR and NIR components to global solar radiation measured at Botucatu site in Brazil
(Pergamon-Elsevier B.V. Ltd, 2011-01-01)
The relationships between the four radiant fluxes are analyzed based on a 4 year data archive of hourly and daily global ultraviolet (I(UV)), photosynthetically active-PAR (I(PAR)), near infrared (I(NIR)) and broadband ...
Study of entrance surface skin dose in veterinary radiology
(2009-12-01)
This study aims the evaluation of the radiation dose levels involved in veterinary radiology and to contribute to review the procedures for performing radiographic exams in animals in the Department of Veterinary Radiology ...
Proton Radiation Influence on SOI FinFET Trade-Off between Transistor Efficiency and Unit Gain Frequency
(Ieee, 2016-01-01)
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient
(Ieee, 2016-01-01)
This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves ...
Developing new radiotherapy techniques using linac based gamma radiation sources
(2007-12-01)
A major challenge in cancer radiotherapy is to deliver a lethal dose of radiation to the target volume while minimizing damage to the surrounding normal tissue. We have proposed a model on how treatment efficacy might be ...
Proton radiation effects on the self-aligned triple gate SOI p-type Tunnel FET output characteristic
(Ieee, 2017-01-01)
This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 mu m width and three different channel lengths were exposed to a 600 keV proton radiation ...
Study of underlapped finfets behavior for a radiation sensing purpose
(2020-04-01)
In this paper the electrical characteristics of the Underlapped FinFET transistor is studied for different underlap lengths and underlap oxide material. Disturbs caused by underlap region, such as series resistance effect ...
Influence of proton radiation and strain on nFinFET zero temperature coefficient
(2016-11-02)
This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves ...
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
(2016-11-02)
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...
Measurement of orthovoltage X-ray intensity with a lithium niobate transducer
(2009-12-01)
A microcontrolled instrument for measuring the energy fluence rate (or intensity) of X-ray pulses in the orthovoltage range of 120 to 300 kV is described. The prototype instrument consists of a pyroelectric sensor, a ...