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TiO2 thin film growth using the MOCVD method
(ABM, ABC, ABPol, 2001-07)
Titanium oxide (TiO2) thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant ...
Bimetallic Pd-Pt films prepared by MOCVDBimetallic Pd-Pt films prepared by MOCVD
(Revista Mexicana de Física, 2009)
Fabricación de películas delgadas de zns por la técnica mocvd
(2011-10-27)
La técnica de depositación química en fase vapor usando precursores metalorgánicos
(MOCVD), ha tenido una buena aceptación en los procesos de depositación y
crecimiento de películas delgadas de materiales semiconductores ...
Síntesis de Nano-alambres de GaN Vía MOCVD
(2016-03-11)
En el presente trabajo de investigación fue propuesta la síntesis de nano-alambres de Nitruro de Galio, el cual es un semiconductor que ha tomado mucha importan-cia en los años recientes debido a sus propiedades que le ...
Síntesis de Nano-alambres de GaN Vía MOCVD
(2011-12-09)
In this research work has been proposed the synthesis of Gallium Nitride Nan-owires, which is a semiconductor that has gained much importance in recent years due to its properties that allow it to be used in high performance ...
Characterization of AlxGa1_xAs layers grown on (100) GaAs by Inetallic-arsenic-based-MOCVD
(2012-11-27)
We present the electrical and structural characterization of AlxGa 1 _ xAs layers grown in a metallic arsenic-based-MOCVD system. The gallium and aluminium precursors were the metal-organic ...
Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD
(Elsevier Science BvAmsterdamHolanda, 2009)
Characterization of ZrO 2 thin films deposited by MOCVD as ceramic coatings
(Journal of Materials Science Volume 47, Issue 5, March 2012, Pages 2300-2309, 2012-03-05)
Transparent cubic-, tetragonal-zirconia thin films were successfully deposited on glass and quartz substrates by using the metalorganic chemical deposition technique. The thin films were achieved by adjusting deposition ...
Optical and structural properties of GaAs highly doped with carbon
(2012-11-27)
This work presents the characterization of p-type GaAs layers highly doped with carbon grown in a metallic-arsenic-based-MOCVD system. The gallium precursor was the compound trimethylgallium (TMG) and elemental ...