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Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
Tuning the insulator-metal transition in oxide interfaces: an ab initio study exploring the role of oxygen vacancies and cation interdiffusion
(Wiley VCH Verlag, 2014-07)
We investigate the structural, electronic, and magnetic properties of a particular interface in the oxide heterostructures LaAlOmath formula/SrTiOmath formula (LAO/STO) and TiOmath formula-anatase/LaAlOmath formula (TiOmath ...
THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES
(Elsevier B.V., 1995-03-01)
The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate ...
THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES
(Elsevier B.V., 1995-03-01)
The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate ...
Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors
(American Institute of Physics (AIP), 2008-03-01)
A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the ...
Determination of density of states in PPS from space-charge-limited current measurements
(1997-01-01)
Space-charge-limited currents measurements have been carried out on undoped amorphous poly p-phenylene sulfide. The scaling law is checked for different samples with varying thickness, and J-V data analyzed. The position ...