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Tecnologias em sistemas de circuitos integrados
(Universidade Tecnológica Federal do ParanáCampo MouraoBrasilDepartamento Acadêmico de EletrônicaEngenharia EletrônicaUTFPR, 2018-06-18)
The crescent semiconductor market aims more and more researches at it’s main technology, CMOS (Complementary metal-oxide-semiconductor). This paper is a literature review based on the databases IEEE and Science Direct. The ...
Filtragem de imagens em escala de cinza por meio de rede neuronal celular anal??gica em tecnologia CMOS
(Escola Polit??licooem Engenharia El??tricaUFBAbrasil, 2019-03-11)
Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
Projeto e análise de um circuito integrado do tipo amplificador operacional 741
(Universidade Tecnológica Federal do ParanáCampo MouraoBrasilDepartamento Acadêmico de EletrônicaEngenharia EletrônicaUTFPR, 2019-11-29)
The operational amplifiers feature applications in the areas of instrumentation, control systems, voltage and current regulation systems, signal processing, among others. This applications are used in medical equipament, ...
X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
(American Institute of Physics, 2014-08)
In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive ...
Filtragem de imagens em escala de cinza por meio de rede neuronal celular analógica em tecnologia CMOS
(Escola Politélicooem Engenharia ElétricaUFBAbrasil, 2019-03-11)
Este trabalho aborda a implementação em nível de simulação de operações de filtragem de imagens em uma CNN (Cellular Neuronal Network - Rede Neuronal Celular) analógica desenvolvida em tecnologia CMOS (Complementary metal ...
Physical mechanism of progressive breakdown in gate oxides
(American Institute of Physics, 2014-06)
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of ...