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An active leakage-injection scheme applied to low-voltage SRAMs
(2003-07-14)
An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective ...
An active leakage-injection scheme applied to low-voltage SRAMs
(2003-07-14)
An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective ...
General simplified model to calculate current distribution in electrochemical reactors with N bipolar electrodes
(Electrochemical Society, 2019-04-18)
A new mathematical model to calculate current density distributions and leakage current in electrochemical reactors with N bipolar electrodes, which are closer to those found in the industrial field, is developed. Several ...
Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films
(Elsevier B.V. Sa, 2011-04-28)
In this paper, we report on the structure, ferroelectric/magnetoelectric properties and improvement of leakage current density of (Bi0.85Nd0.15)FeO3 (BNFO) thin films deposited on Pt(1 1 1)/Ti/SiO2/Si substrates from the ...
Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films
(Elsevier B.V. Sa, 2011-04-28)
In this paper, we report on the structure, ferroelectric/magnetoelectric properties and improvement of leakage current density of (Bi0.85Nd0.15)FeO3 (BNFO) thin films deposited on Pt(1 1 1)/Ti/SiO2/Si substrates from the ...
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films
(2021-06-01)
BiFeO3 thin films were prepared using the chemical solution route on Pt/TiO2/SiO2/Si(100) substrates under different crystallization kinetics. The crystallization kinetic effects on the dielectric and electrical properties ...
Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications
(1999-05-01)
We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution ...
Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications
(1999-05-01)
We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution ...
Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method
(American Institute of Physics (AIP), 2005-12-01)
The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 by the polymeric precursor method were investigated. These films showed ...