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An active leakage-injection scheme applied to low-voltage SRAMs
(2003-07-14)
An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective ...
An active leakage-injection scheme applied to low-voltage SRAMs
(2003-07-14)
An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective ...
Escurrimiento oleoso anaranjado o «keriorrea», («orange oily anal leakage»): una nueva enfermedad ligada a cambios de hábito alimentario
(Elsevier España, 2012)
INTRODUCTION:
Information is accumulating on exceptional cases of oily orange anal leakage, probably caused by certain foods and their form of consumption. The leakage is usually inadvertent and is worrisome for ...
Escurrimiento oleoso anaranjado o «keriorrea», («orange oily anal leakage»): una nueva enfermedad ligada a cambios de hábito alimentario
(Elsevier España, 2012)
INTRODUCTION:
Information is accumulating on exceptional cases of oily orange anal leakage, probably caused by certain foods and their form of consumption. The leakage is usually inadvertent and is worrisome for ...
Bacterial leakage in root canals filled with conventional and MTA-based sealers
(Wiley-Blackwell, 2011-04-01)
P>AimTo evaluate bacterial leakage after filling root canals with several endodontic sealers, including MTA-based materials.MethodologyOne hundred and thirty single-rooted extracted human teeth were randomly divided into ...
Bacterial leakage in root canals filled with conventional and MTA-based sealers
(Wiley-Blackwell, 2011-04-01)
P>AimTo evaluate bacterial leakage after filling root canals with several endodontic sealers, including MTA-based materials.MethodologyOne hundred and thirty single-rooted extracted human teeth were randomly divided into ...
n-Channel Bulk and DTMOS FinFETs: Investigation of GIDL and Gate Leakage Currents
(Ieee, 2016-01-01)
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (I-G) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in ...
n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents
(2016-11-02)
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (Ig) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in ...