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Imaging the electrostatic landscape of unstrained self-assemble GaAs quantum dots
(2022-04-16)
Unstrained GaAs quantum dots are promising candidates for quantum information devices due to their optical properties, but their electronic properties have remained relatively unexplored until now. In this work, we ...
Study of heterostructures of Cu3BiS3-buffer layer measured by Kelvin probe force microscopy measurements (KPFM)1
The interface formed between Cu3BiS3 thin films and the buffer layer is a potentially limiting factor to the performance of solar cells based on Al/Cu3BiS3/buffer heterojunctions. The buffer layers of ZnS and In2S3 were ...
Electric force microscopy techniques on GaAs mesoscopic structures
(Universidade Estadual Paulista (Unesp), 2018-03-29)
As técnicas de microscopia de sonda Kelvin (KPFM) e de microscopia de força eletrostática (EFM) são amplamente utilizadas para analisar a distribuição do potencial de superfície, porém com pouca aplicação em nanoestruturas ...
Mapeamento da distribuição de cargas na interface de materiais orgânicos com metais e óxidos metálicos
(Universidade Estadual Paulista (Unesp), 2021-04-07)
Um obstáculo para o desenvolvimento e aprimoramento de dispositivos baseados em materiais orgânicos está relacionado à complexidade da interface formada entre esses materiais e substratos de diferentes naturezas. Dispositivos ...
Tuning properties of carbon surfaces functionalized with amino-ended dendron layers by exploring their supramolecular interactions
(Elsevier Science Sa, 2017-11)
An effective tailoring of carbon surfaces functionalized with a first-generation amino-ended dendrons was achieved by a simple self-assembly strategy. The morphology, as well as the viscoelastic and electrical properties ...
Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and ...