Now showing items 1-10 of 264
Anomalous lattice parameter of magnetic semiconductor alloys
(AMER INST PHYSICS, 2009)
The addition of transition metals to III-V semiconductors radically changes their electronic, magnetic, and structural properties. We show by ab initio calculations that in contrast to the conventional semiconductor alloys, ...
Hole concentration in a diluted ferromagnetic semiconductor
(Iop Publishing LtdBristolInglaterra, 2002)
Ohmic contacts with palladium diffusion barrier on III-V semiconductors
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the ...
Atomic scale characterization of Mn doped InAs/GaAs quantum dots
(AMER INST PHYSICS, 2010)
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent ...
Study of optical properties of GaAsN layers preparedby molecular beam epitaxy
Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
(Amer Inst Physics, 2013-01)
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin ﬁlms by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study ...
Stabilization of substitutional Mn in silicon-based semiconductors
(American Physical SocCollege PkEUA, 2004)
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN
(Universidade Federal de São CarlosUFSCarPrograma de Pós-graduação em FísicaCâmpus São Carlos, 2016-09-08)
Diluted nitride III-V semiconductor leagues have physical properties that make them interesting for applications on optoelectronic devices. The possibility to lattice matching GaAsPN with silicon makes this semiconductor ...
Electron g factor anisotropy in asymmetric III???V semiconductor quantum wells
(SEMICONDUCTOR SCIENCE AND TECHNOLOGY (PRINT), 2016-09-27)