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Pressure-induced amorphization and collapse of magnetic order in the type-I clathrate Eu8Ga16Ge30
(Amer Physical SocCollege PkEUA, 2013)
PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES
(American Physical SocCollege PkEUA, 1992)
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data
(Iop Publishing Ltd, 2020-09-01)
In this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. ...
Gas-phase nucleophilic reactions of Ge(OCH3)(4): experimental and computational characterization of pentacoordinated Ge anions
(Elsevier Science BvAmsterdamHolanda, 2000)
Electron affinity of XnGe(OMe)(3-n) radicals (X = H, F; n=0-2) and the Ge-H bond dissociation energy
(Elsevier Science BvAmsterdamHolanda, 2001)
Pressure-induced changes in the magnetic and magnetocaloric properties of RMn(2)Ge(2) (R=Sm,Gd)
(Amer Physical SocCollege PkEUA, 2008)
On the cross-over between 2-dimensional and 3-dimensional growth in Si/Ge-n/Si quantum wells
(Pergamon-elsevier Science LtdOxfordInglaterra, 1998)
Raman spectroscopy of GeSe and AgGeSe thin films
(Natl Inst R&d Materials Physics, 2013-11)
The structural properties of Agy(Ge0.25Se0.75)1-y thin films (y=0, 0.07, 0.10, 0.15, 0.20 and 0.25 at. fraction) were studied. The films were prepared by pulsed laser deposition using bulk glass targets of the studied ...