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Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Kluwer Academic Publ, 2004-07-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning ...
Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Kluwer Academic Publ, 2004-07-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning ...
The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors
(Elsevier B.V., 2004-11-15)
Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and ...
The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors
(Elsevier B.V., 2004-11-15)
Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and ...
Filmes finos de LaNiO3 e PZT preparados pelo métodos das soluções precursoras poliméricas e depositados em substratos de silício
(Universidade Estadual Paulista (Unesp), 2006-04-24)
Nesta tese estudou-se a preparação de filmes finos de PZT não dopados e dopados com Nióbio, depositados sobre substratos de Pt/Ti/SiO2/Si para aplicações em memórias não voláteis de acesso randômico (NVRAM) e memórias ...
Termodinámica de los defectos puntuales en titanato de bismuto
(2018-04-02)
RESUMEN: El titanato de bismuto (Bi4Ti3O12 o BiTO) es conocido por su alta resistencia a la fatiga dieléctrica y la polarización remanente relativamente grande. Debido a estas características se ha aplicado en memorias ...
Termodinámica de los defectos puntuales en titanato de bismuto
(Martínez Morales, María del Carmen, 2017-10-15)
El titanato de bismuto (Bi4Ti3O12 o BiTO) es conocido por su alta resistencia a la fatiga dieléctrica y la polarización remanente relativamente grande. Debido a estas características se ha aplicado en memorias FeRAM. BiTO ...
Retention characteristics of lanthanum-doped bismuth titanate films annealed at different furnaces
(Elsevier B.V. Sa, 2009-05-15)
Lanthanum-doped bismuth titanate thin films (Bi(3.25)La(0.75)Ti(3)O(12) - BLT) were prepared by the polymeric precursor method and crystallized in the microwave and conventional furnaces. The obtained films are polycrystalline ...