Now showing items 1-10 of 307
Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
(Amer Inst PhysicsWoodburyEUA, 1999)
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
(Amer Chemical Soc, 2017-09-01)
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on,graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene ...
Raman and FTIR Spectroscopy of GaSb and AlxGai.xSb Alloys with Nanometric Thickness Grown at Low Temperatures by Liquid Phase Epitaxy
GaSb and AlxGai.xSb thin layers were grown on (001) oriented GaSb substrates by liquid phase epitaxy technique at low temperatures. Until now, there are no previous reports on the growth of this alloy at temperatures lower ...
Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy
(American Vacuum Society, 2013-01-16)
REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH
(Elsevier Science SaLausanneSuíça, 1993)
Influence of substrate conductivity on layer thickness in LPE GaAs
Differences have been foundon the growth rate of epitaxial layers grown simultaneously on semi-insulating andP andN type (1 0 0) GaAs substrates from the same Ga–As liquidsolution. The layers were grown by LPE at 786 C ...
ANALYSIS OF INTERFACIAL MISFIT DISLOCATION BY X-RAY MULTIPLE DIFFRACTION
(Pergamon-elsevier Science LtdOxfordInglaterra, 1993)
Environment of Er in epitaxial Ca1-xErxF2+x thin films using local techniques
(Amer Inst PhysicsMelvilleEUA, 1998)
Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy
(Elsevier Science SaLausanneSuíça, 2003)