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Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...
Study of the Influence of Localized Vibrational Modes in Charge Transport Properties at Nanoscale Systems.
(Sociedade Brasileira de FísicaÁguas de Lindóia, 2013-05-13)
In molecular and atomic devices the interaction between electrons and ionic vibrations has an important role in electronic transport. The electron-phonon coupling can cause the loss of the electron's phase coherence, the ...
Hybridization effects on the out-of-plane electron tunneling properties of monolayers: is h-BN more conductive than graphene?
(Iop Publishing Ltd, 2014-08-29)
Electron transport properties through multilayers of hexagonal boron nitride (h-BN) sandwiched between gold electrodes is investigated by density functional theory together with the non-equilibrium Green's function method. ...
Spin Orbit Effects in the Electronic Transport Properties of Adsorbed Graphene Nanoribbons
(Sociedade Brasileira de FísicaÁguas de Lindóia, 2013-05-13)
Graphene has received great attention due to its exceptional properties, which include corners with zero effective mass, extremely large mobilities, this could render it the new template for the next generation of electronic ...
Reorganization energy for hole and electron transfer of poly(3-hexylthiophene) derivatives
(2016-09-02)
Poly(3-hexylthiophene) (P3HT) is a common material used as electron donor element in active layers of organic solar cells. Previous studies have shown that is possible to improve the electronic properties of the P3HT through ...
Metallic behavior in STO/LAO heterostructures with non-uniformly atomic interfaces
(2020-09-01)
The search for new and low-power switching devices involving the integration of semiconductor thin films is of interest, and has led to renewed research because such devices may exhibit innovative properties. Here, we ...
EINSTEIN RELATION FOR NONLINEAR CHARGE-TRANSPORT IN PHOTOEXCITED POLAR SEMICONDUCTORS
(Pergamon-elsevier Science LtdOxfordInglaterra, 1994)
Efectos de la radiación en las propiedades eléctricas del grafeno : estados topológicos de Floquet inducidos por láser
(2015-12)
Esta tesis está dedicada al estudio teórico del grafeno iluminado por un láser intenso. Nos enfocamos en efectos no perturbativos de la luz sobre el material, utilizando la teoría de Floquet. Mostramos cómo un láser puede ...