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Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating
(Elsevier B.V. Sa, 2008-11-28)
This paper reports the electrical effects of the incorporation of Ce(III) or Ce(IV) in SnO2 thin films, prepared by the sol-gel-dip-coating technique. This doping has drastically increased the resistivity compared to undoped ...
Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating
(Elsevier B.V. Sa, 2008-11-28)
This paper reports the electrical effects of the incorporation of Ce(III) or Ce(IV) in SnO2 thin films, prepared by the sol-gel-dip-coating technique. This doping has drastically increased the resistivity compared to undoped ...
ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS
(Editions PhysiqueLes Ulis CedexFrança, 1981)
THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES
(Elsevier B.V., 1995-03-01)
The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate ...
Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES
(Elsevier B.V., 1995-03-01)
The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate ...