Buscar
Mostrando ítems 11-20 de 28
Magneto-éxcitons em super-redes semicondutoras de InGaAs/InAlAs
(Universidade Federal de Minas GeraisUFMG, 2004-05-25)
In this work we study a sample with two undoped In0,53Ga0,47As/In0,52Al0,48As superlattices grown in sequence on top of each other, on the same InP substrate. We performed magnetophotoluminescence measurements with magnetic ...
Quantum oscillations of spin polarization in a GaAs/AlGaAs double quantum well
(AMER PHYSICAL SOCCOLLEGE PK, 2013-08-02)
5 We employ the circular-polarization-resolved magnetophotoluminescence technique to probe the spin character of electron and hole states in a GaAs/AlGaAs strongly coupled double-quantum-well system. The photoluminescence ...
Magnetic field induced charge redistribution in artificially disordered quantum Hall superlattices
(EPL ASSOCIATION, EUROPEAN PHYSICAL SOCIETYMULHOUSE, 2012)
The photoluminescence from individual quantum wells of artificially disordered weakly coupled multi-layers embedded in wide AlGaAs parabolic wells was investigated in a strong magnetic field. We show that the response of ...
Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well
(American Physical Society - APSCollege Park, 2014-05)
Magnetophotoluminescence andmagnetotransport were studied in a GaAs/AlGaAs triple quantum well. Oscillations of the photoluminescence intensity observed in tiltedmagnetic fields were found to correspond to the interlayer ...
Relação entre dinâmica clássica e transição de fase quântica em modelos de campos médio
(Universidade Federal de Minas GeraisUFMG, 2005-03-14)
In this work, we performed magnetophotoluminescence measurements up to 12 T in the temperature range of 2 K to 100 K in a sample composed by a single quantum well and in three double quantum wells made of InGaAs/InGaAlAs ...
Excitons em poços quânticos acoplados de InGaAs/InGaAlAs
(Universidade Federal de Minas GeraisUFMG, 2005-03-04)
In this work, we performed magnetophotoluminescence measurements up to 12 T in the temperature range of 2 K to 100 K in a sample composed by a single quantum well and in three double quantum wells made of InGaAs/InGaAlAs ...
Efeitos de localização de portadores em poços quânticos de GaBiAs/GaAs
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2015-08-04)
In order to investigate optical and spin properties of GaBiAs / GaAs quantum
wells, we performed both photoluminescence and magneto-photoluminescence
spectroscopy measurements in three samples: 10 nm quantum wells with ...
Structural properties of nanoscopic ring systems and their optical response
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2016-03-30)
In this thesis, the electronic and structural properties of nanostructured systems were studied aiming to get a realistic model for quantum rings, potentially adaptable for quantum dots. To attain these goals, several ...
Caracterização óptica e magneto-óptica de filmes de GaPN
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2016-09-13)
This project proposes a systematic study of III-V semiconductors, which are promising for integration with silicon. It consists of the characterization of GaPN film samples with different nitrogen concentrations. We ...