Artículos de revistas
Strain-dependent optical emission in In1-xGaxAs/InP quantum wells
Registro en:
Physical Review B. American Physical Soc, v. 64, n. 15, 2001.
0163-1829
WOS:000171694600010
Autor
Tudury, HAP
Nakaema, MKK
Iikawa, R
Brum, JA
Ribeiro, E
Carvalho, W
Bernussi, AA
Gobbi, AL
Institución
Resumen
InGaAs/InP strained-layer modulation-doped quantum wells were studied by photoluminescence. The combination of the built-in strain and the quantum confinement in this system leads to a strong valence band mixing yielding direct and indirect band gap structures. We demonstrate that the optical emission line shape is strongly dependent on the valence band dispersion and it is a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides an additional evidence of direct-to-indirect band gap transition in strained heterostructures. 64 15