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LiNbO3 thin films prepared through polymeric precursor method
(Elsevier B.V., 2003-04-01)
Thin films of lithium niobate were deposited on (100) silicon by the polymeric precursor method (Pechini method). Annealing in static air was performed at 500degreesC for 3 h. The films obtained were characterized by X-ray ...
LiNbO3 thin films prepared through polymeric precursor method
(Elsevier B.V., 2003-04-01)
Thin films of lithium niobate were deposited on (100) silicon by the polymeric precursor method (Pechini method). Annealing in static air was performed at 500degreesC for 3 h. The films obtained were characterized by X-ray ...
Evidence of ferroelectric behaviour in CaCu3Ti4O12 thin films deposited by RF-sputtering
(2019-01-01)
The origin of abnormal ferroelectric and unusual piezoelectricity in the polycrystalline CaCu3Ti4O12 (CCTO) thin films deposited by RF-sputtering on Pt/Ti/SiO2/Si (100) substrates was explored. The CCTO thin films, deposited ...
Dielectric and ferroelectric properties of PZT and PT thin films for saw sensors applications
(2004-12-01)
It is very important for the building of the SAW devices to study dielectric and ferroelectrics properties because every SAW device is based in piezoelectric effect that it is made up to transform an electric sign in the ...
Dielectric and ferroelectric properties of PZT and PT thin films for saw sensors applications
(2004-12-01)
It is very important for the building of the SAW devices to study dielectric and ferroelectrics properties because every SAW device is based in piezoelectric effect that it is made up to transform an electric sign in the ...
Influence of temperature on the dielectric and ferroelectric properties of bismuth titanate thin films obtained by the polymeric precursor method
(Elsevier B.V., 2005-08-15)
The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. Atomic force microscopy and scanning ...
Influence of temperature on the dielectric and ferroelectric properties of bismuth titanate thin films obtained by the polymeric precursor method
(Elsevier B.V., 2005-08-15)
The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. Atomic force microscopy and scanning ...
Influence of strains and defects on ferroelectric and dielectric properties of thin-film barium-strontium titanates
(Japan Soc Applied Physics, 2002-11-01)
Pristine, W and Mn 1% doped Ba(0.6)Sr(0.4)TiO(3) epitaxial thin films grown on the LaAlO(3) substrate were deposited by pulsed laser deposition (PLD). Dielectric and ferroelectric properties were determined by the capacitance ...
Influence of strains and defects on ferroelectric and dielectric properties of thin-film barium-strontium titanates
(Japan Soc Applied Physics, 2002-11-01)
Pristine, W and Mn 1% doped Ba(0.6)Sr(0.4)TiO(3) epitaxial thin films grown on the LaAlO(3) substrate were deposited by pulsed laser deposition (PLD). Dielectric and ferroelectric properties were determined by the capacitance ...